l e s h a n r a d i o c o m p a n y , l t d . LBAS16WT1?1/4 silicon switching diode symbol max unit continuous reverse voltage v r 75 v recurrent peak forward current i r 200 ma peak forward surge current pulse width = 10 m s i fm(surge) 500 ma total power dissipation, one diode loaded t a = 25 c derate above 25 c mounted on a ceramic substrate (10 x 8 x 0.6 mm) p d 200 1.6 mw mw/ c operating and storage junction temperature range t j , t stg 55 to +150 c thermal characteristics characteristic symbol max unit thermal resistance, junction to ambient one diode loaded mounted on a ceramic substrate (10 x 8 x 0.6 mm) r q ja 0.625 c/mw device marking LBAS16WT1 = a6 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit forward voltage (i f = 1.0 ma) (i f = 10 ma) (i f = 50 ma) (i f = 150 ma) v f e e e e 715 866 1000 1250 mv reverse current (v r = 75 v) (v r = 75 v, t j = 150 c) (v r = 25 v, t j = 150 c) i r e e e 1.0 50 30 m a capacitance (v r = 0, f = 1.0 mhz) c d e 2.0 pf reverse recovery time (i f = i r = 10 ma, r l = 50 w ) (figure 1) t rr e 6.0 ns stored charge (i f = 10 ma to v r = 6.0 v, r l = 500 w ) (figure 2) qs e 45 pc forward recovery voltage (i f = 10 ma, t r = 20 ns) (figure 3) v fr e 1.75 v 3 cathode 1 anode 1 3 2 sc-70/sot-323 LBAS16WT1 rating maximum ratings (ta = 25 o c)
l e s h a n r a d i o c o m p a n y , l t d . lbas16wt?2/4 LBAS16WT1 figure 1. reverse recovery time equivalent test circuit figure 2. recovery charge equivalent test circuit figure 3. forward recovery voltage equivalent test circuit v f 1 ns max 90% 10% t 100 ns t if t rr i rr 500 w dut 50 w duty cycle = 2% v f 90% 10% 20 ns max t 400 ns v c v cm t v cm qa c 500 w dut baw62 d1 243 pf 100 k w duty cycle = 2% v 120 ns t 2 ns max 10% 90% v v fr 1 k w 450 w 50 w dut duty cycle = 2% oscilloscope r 10 m c 7 pf
l e s h a n r a d i o c o m p a n y , l t d . LBAS16WT1?3/4 LBAS16WT1 100 0.2 0.4 v f , forward voltage (volts) 0.6 0.8 1.0 1.2 10 1.0 0.1 t a = 855 c 10 0 v r , reverse voltage (volts) 1.0 0.1 0.01 0.001 10 20 30 40 50 0.68 0 v r , reverse voltage (volts) 0.64 0.60 0.56 0.52 c d , diode capacitance (pf) 2468 i f , forward current (ma) figure 4. forward voltage figure 5. leakage current figure 6. capacitance t a = -405 c t a = 255 c t a = 150 5 c t a = 125 5 c t a = 855 c t a = 555 c t a = 255 c i r , reverse current ( m a)
leshan radio company, ltd. 0.7 1.9 0.028 0.65 0.025 0.65 0.025 inches mm 0.075 0.035 0.9 pin 1. anode 2. no connection 3. cathode notes: 1 . dimension i ng and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. dim min max min max millimeters inches a 0.071 0.087 1.80 2.20 k 0.017 ref 0.425 ref l 0.026 bsc 0.650 bsc n 0.028 ref 0.700 ref s 0.079 0.095 2.00 2.40 b 0.045 0.053 1.15 1.35 c 0.032 0.040 0.8 0 1.00 d 0.012 0.016 0.30 0.40 g 0.047 0.055 1.20 1.40 h 0.000 0.004 0.00 0.10 j 0.004 0.010 0.10 0.25 c n a l d g s b h j k 3 12 0.05 (0.002) sc - 70 / sot - 323 LBAS16WT1 LBAS16WT1 - 4/4
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